Nanowerk

World's first vertically stacked gate-all-around Si nanowire CMOS transistors

(Nanowerk News) At this week’s IEEE IEDM conference, world-leading research and innovation hub for nano-electronics and digital technology, imec, reported for the first time the CMOS integration of ...
EDN

Matching ESD protection to process geometry

Advanced CMOS process technologies enable IC designers to deliver higher performing devices, but also increase the need for extra board-level ESD protection to ensure the reliability of the end ...
Business Wire

X-FAB Expands CMOS Optical Sensors Portfolio with Industry’s First 4-Transistor Image Sensor Process for High-Speed Applications Requiring Large Pixels

ERFURT, Germany--(BUSINESS WIRE)--X-FAB Silicon Foundries, the leading More-than-Moore foundry, today introduced XS018, the first specialized 0.18µm CMOS process for fast and large image sensor pixels ...