TL;DR: SK hynix unveiled a 30-year DRAM roadmap featuring 4F2 Vertical Gate and 3D DRAM technologies to enhance performance, integration, and power efficiency beyond 10nm scales. These innovations aim ...
SK hynix has just announced it's planning to develop a 4F2 (square) DRAM, joining South Korean rival Samsung and its journey into the world of 3D DRAM. The cost of EUV (extreme lithography) processes ...
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