For decades, compute architectures have relied on dynamic random-access memory (DRAM) as their main memory, providing temporary storage from which processing units retrieve data and program code. The ...
Kioxia develops high-density 3D DRAM using stackable oxide-semiconductor transistors Eight-layer transistor stacks show reliable operation in laboratory demonstrations Oxide-semiconductor InGaZnO ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will enable the ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of OCTRAM (Oxide-Semiconductor Channel Transistor DRAM), a new type of 4F 2 DRAM, ...
Kioxia develops high-density 3D DRAM using stackable oxide-semiconductor transistors Eight-layer transistor stacks show reliable operation in laboratory demonstrations Oxide-semiconductor InGaZnO ...
Dynamic random-access memory (DRAM) chips contain many other transistors besides the access transistor to enable full operation of the DRAM memory. These peripheral transistors must meet stringent ...
Process and device technologies have had to overcome numerous technical challenges as DRAM memory devices have transitioned between different cell architectures. When DRAM technology nodes went beyond ...
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