In this eGaN FET-silicon power shoot-out series article, we examine RF performance using the 200 V EPC2012 [3] eGaN FET as a starting point. The eGaN FET is optimized as a power-switching device but ...
The single FET in an electret microphone's housing may soon become an endangered species. National Semicon-ductor Corp. of Santa Clara, Calif., has two amplifiers that replace the junction FET (JFET) ...
The MSK 0003 (B) is a FET input, high speed voltage follower/buffer amplifier. This device has wide bandwidth and is compatible with all other 0033 designs. The FET input is cascaded to force the ...
The SHM-50 is a complete sample-hold circuit containing a precision MOS hold capacitor and a MOSFET switching configuration, resulting in faster switching and a feed-through attenuation of –78 dB. The ...
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