The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...
“Our research over the years identified and characterized the underlying physical mechanism responsible for NBTI and helped create a framework for predictive DC and AC NBTI simulation of planar FETs,” ...
The U.S. National Renewable Energy Laboratory has adopted Synopsys’ Sentaurus TCAD package for simulating solar cell characteristics to improve performance. The simulations provide NREL scientists ...
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