High-voltage silicon-carbide (SiC) MOSFETs and diodes combine the advantages of fast switching speeds and very low switching losses. This allows power converters designed with them to operate at ...

GaN and SiC mosfets were tested and compared by a distribution company using the GaNdalf modular development platform. David Woodcock reports on the findings. The traditional silicon power mosfet is a ...

Here, Rich Miron, Applications Engineer at Digi-Key Electronics explores the operation of switch mode power supplies and explores make Vs. buy decision process for power supplies. Miron also ...

For the PDF version of this article, click here. As the dc-dc conversion industry proceeds toward the demand for improved power density and efficiency, thermally enhanced packages with SO-8 footprints ...

Diodes has introduced a pair of dual-channel high and low-side mosfet drivers for applications up to 50V. Called DGD0506 and DGD0507, they will both driver a pair of n-channel mosfets in a half-bridge ...

Measuring the actual collector-emitter breakdown voltage is practically impossible without destroying the device. Therefore, BVCES is the collector-emitter voltage at which no more than the specified ...

In today’s deep sub-micron technology nodes like 16nm, 7nm & beyond, there is a huge challenge for accurate static timing calculation. Ever increasing routing congestion, thin metal layers and ...