KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its line-up of N-channel power MOSFETs fabricated with the latest-generation process [1], ...

A type of metal oxide semiconductor field-effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides ...

Although the development of power MOSFETs began with the V-MOS structure, the first commercially successful devices were based on the DMOS structure. In the DMOSFET structure, the MOS channel is ...

Power MOSFETs are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of ...

Each new generation of microprocessors has seen the integration of a larger number of transistors operating at higher clock frequencies with the goal of enabling higher performance in computing and ...

DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Rohm BSM180D12P3C007 Trench SiC MOSFET: Structure and Cost Analysis" report to their offering. The BSM180D12P3C007 is a ...

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...

Trench structures will halve the on-resistance of silicon carbide power mosfets, claimed Rohm. “Compared to existing planar-type SiC mosfets, on-resistance is reduced by 50% in the same chip size, ...

Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, ...