A team of Chinese researchers has built a ferroelectric transistor with a gate length of just 1 nanometer that runs on 0.6 ...

Tiny electronic devices, called microelectronics, may one day be printed as easily as words on a page, thanks to new research from scientists at the U.S. Department of Energy's (DOE) Argonne National ...

Based on high-frequency high-voltage vertical field-effect transistors (HVVFETs), the HVV1011-300, HVV1214-025, and HVV1214-100 power transistors deliver frequency bandwidth, voltage level, and power ...

EPC claims its seventh-generation, 40-V power transistor delivers up to 3X better performance than equivalent silicon MOSFETs.

A research team led by Professor Jae Eun Jang and Dr. Goeun Pyo from the Department of Electrical Engineering and Computer Science at DGIST has developed "dual-modulated vertically stacked transistors ...

Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel lengths, advancing low-power 3D chip integration.

The MRFE6S9046N, MRF8S9100H/HS, and MRF8S18120H/HS high-performance RF power transistors, are based on laterally diffused metal oxide semiconductor (LDMOS) technology, and incorporate enhancements ...

EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon MOSFETs EL SEGUNDO, CA, UNITED STATES ...

Smarter Devices Spur Savvy Supply Design OVER THE YEARS, ADVANCES IN POWER semiconductors, especially discrete power transistors and power control ICs, have played a crucial role in the development of ...

Semiconducting CNTs possess several advantages over traditional silicon, including higher carrier mobility and better electrostatic control at nanoscale dimensions. These properties make them ...