Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...
On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...
NEO Semiconductor has unveiled its "3D X-DRAM", which it is pitching as the world's first 3D NAND-like DRAM cell array. Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with ...
VCT (vertical channel transistor) DRAM is one of the first achievements towards this goal, with Samsung expected to complete the initial development of VCT DRAM in 2025, with 3D DRAM hitting the ...
AI workloads are pushing the boundaries of compute, memory, and interconnect architectures, and to meet these goals, ...
SEOUL, South Korea, June 9, 2025 /PRNewswire/ -- SK hynix Inc. (or "the company", www.skhynix.com) announced today that it presented a new DRAM technology roadmap for the next 30 years and the ...
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