As the industry advances into the angstrom era, gate-all-around architectures combined with atomic-scale materials ...

Organic electrochemical transistors could be better than conventional inorganic devices for certain uses, but have been held back by performance issues. The solution could be to build up these organic ...

The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...

One of the key technologies to enable scaling below 3nm involves delivering of power on the backside of a chip. This novel approach enhances signal integrity and reduces routing congestion, but it ...

The chip industry is pushing the boundaries of innovation with the evolution of finFETs to gate-all-around (GAA) nanosheet transistors at the 3nm node and beyond, but it also is adding significant new ...