The position, held by Holger Kapels, will drive research into next-generation semiconductor components and train engineers at ...

Thierry Bouchet, CEO of Wise Integration, a pioneer in digital control for gallium nitride (GaN) and GaN IC-based power supplies, , explains the company’s journey to the launch of its first fully ...

iDEAL Semiconductor’s SuperQ technology has entered full production, with the first products being 150 V MOSFETs. A family of ...

Power Integrations, a maker of high-voltage ICs for energy-efficient power conversion, has appointed Jennifer A. Lloyd, as ...

Three-phase drive evaluation board uses radiation-hardened EPC7011L7C eGaN power stage EPC Space, a maker of ...

Northeastern University researchers have developed a new, lightweight plastic-ceramic composite that conducts heat and can be ...

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

Singapore has opened the National Semiconductor Translation and Innovation Centre for GaN; the country's first national ...

For the last year Japanese chemical company Resonac and Tohoku University have been exploring using SiC powder, produced from ...

Distributor Richardson Electronics has announced a technology partner agreement with Pakal Technologies, a US-based silicon ...

Nexperia has announced two 1200V 20A SiC Schottky diodes designed to address the demand for ultra-low power loss rectifiers ...

Nexperia has announced the expansion of its bipolar junction transistor (BJTs) portfolio by introducing 12 new MJD-style BJTs in clip-bonded FlatPower (CFP15B) packaging.