Example of diffusion in semi-conducting materials - Part 1
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YouTubeuwofracture
Example of diffusion in semi-conducting materials - Part 1
Example 7.6 Callister Boron atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of B in this silicon material is known to be 1x10^20 atoms/m3. The predeposition treatment is to conducted at 900oC for 30 minutes; the surface concentration of B is to be maintained at a ...
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